On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductors
نویسندگان
چکیده
منابع مشابه
Theory of Ferromagnetism in Diluted Magnetic Semiconductors
Carrier-induced ferromagnetism has been observed in several (III,Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn spins and valence-band carriers. We discuss the applicability of this model, the validity of a mean-field approximation for its interaction term widely used in t...
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Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the freque...
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متن کاملEffects of disorder on ferromagnetism in diluted magnetic semiconductors.
We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the...
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Taking into account both random impurity distribution and thermal fluctuations of localized spins, we have performed a model calculation for the carrier (hole) state in Ga1−xMnxAs by using the coherent potential approximation (CPA). The result reveals that a p-hole in the band tail of Ga1−xMnxAs is not like a free carrier but is rather virtually bounded to impurity sites. The carrier spin stron...
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ژورنال
عنوان ژورنال: Low Temperature Physics
سال: 2000
ISSN: 1063-777X,1090-6517
DOI: 10.1063/1.1334439